Semiconductor device having SEPP connected NPN and PNP transistors

A semiconductor device comprising:

• a first semiconductor device having an NPN power transistor formed on a first semiconductor substrate;
• and
• a second semiconductor device having a PNP power transistor complementary to the NPN power transistor formed on a second semiconductor substrate,
• said first and second semiconductor devices capable of being SEPP connected, said first semiconductor device having one or a plurality of serially connected bias circuit diodes formed on the first semiconductor device, the anode side of the diode or diodes being connected to the base of the NPN power transistor and the cathode side thereof being connected to a first bias terminal, said second semiconductor device having one or a plurality of serially connected bias circuit diodes formed on the second semiconductor device, the cathode side of the diode or diodes being connected to the base of the PNP power transistor and the anode side thereof being connected to a second bias terminal, wherein:
• the total forward voltage drop V.sub.1 of the bias circuit diode or diodes of one of said first and second semiconductor devices is set to an arbitrary constant value smaller than E exclusive of about E/2;
• and
• the bias circuit diode or diodes of the other of said first and second semiconductor devices are Schottky barrier diodes and the total forward voltage drop V.sub.2 of the bias diode or diodes is set to a predetermined value of about (E -V.sub.1), where E is a total forward voltage drop between the bases and emitters of the NPN and PNP power transistors of said first and second semiconductor devices.