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US 6,054,349 AGranted
Single-electron device including therein nanocrystals
AssigneeFujitsu Limited
InventorsAnri Nakajima, Naoto Horiguchi, Hiroshi Nakao
Life of this patent
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Abstract
A single-electron device includes a substrate, an insulating film provided on the substrate, a plurality of nanometer-size conductive particles formed in the insulating film along an interface between the substrate and the insulating film, and an electrode provided on the insulating film, wherein the conductive particles have a generally identical size and arranged substantially in a plane at a depth closer to the substrate.
Claims13
A method of fabricating a single-electron device, comprising the steps of:
- introducing metal atoms into an insulating film provided on a substrate;
- and
- causing a diffusion of said metal atoms in said insulating film so as to precipitate ultra-fine metal particles having a nanometer size in said insulating film along an interface between said insulating film and said substrate in a state that said metal particles are isolated from each other;
- wherein said step of introducing metal atoms is conducted such that a concentration level of said metal atoms in said insulating film is substantially zero in said substrate including said interface.
1 more element
Dependencies are inferred from the claim text.