Composition for underlying film and method of forming a pattern using the film
AssigneeKabushiki Kaisha Toshiba
InventorsYasuhiko Sato, Yasunobu Onishi
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Abstract
A method of forming a pattern which comprises the steps of forming an underlying film on a work film, forming a resist film on the underlying film, exposing the underlying film and the resist film to a patterning exposure light, and developing predetermined regions thus exposed of the resist film and the underlying film with a developing solution. The underlying film has a property that the solubility thereof to the developing solution can be changed by an action of an acid. The resist film and/or the underlying film contains a compound which is capable of generating the acid.
Claims10
A method of forming a pattern which comprises the steps of:
- forming an underlying film on a work film;
- forming a resist film on said underlying film;
- exposing said underlying film and said resist film to a patterning exposure light;
- and
- developing said resist film and said underlying film with a developing solution to dissolve and remove a predetermined region of said underlying film with a portion of said resist film thereon, thereby forming a pattern comprising an underlying film pattern and a resist pattern positioned thereon;
- and
- wherein:
- said resist film and/or said underlying film contains an acid-generating agent which generates an acid when an exposure is carried out;
- and
- said underlying film includes a compound whose solubility in said developing solution is changed by an action of said acid.
A method of forming a pattern which comprises the steps of;
- forming an underlying film on a work film;
- forming a resist film containing a phenolic resin on said underlying film;
- exposing said resist film to a patterning exposure light using a first irradiation of light;
- developing said resist film thus exposed with a developing solution to form a resist pattern;
- exposing said underlying film through said resist pattern used as a mask to a patterning exposure light using a second irradiation of light;
- and
- developing an exposed region of said underlying film;
- wherein said underlying film is constituted by an underlying film composition containing a compound having a substituent group which is adapted to be decomposed by an acid and capable of generating an alkali-soluble group after the decomposition thereof, and a photo-acid-generating agent which is capable of generating said acid;
- said underlying film composition further comprising a polycyclic aromatic hydrocarbon group.
A method of forming a pattern which comprises the steps of;
- forming an underlying film on a work film, said underlying film containing a compound having a substituent group which is adapted to be decomposed by an acid and capable of generating an alkali-soluble group after the decomposition thereof, and a photo-acid-generating agent which is capable of generating said acid;
- forming a resist film containing a phenolic resin on said underlying film;
- exposing said resist film to an electric charge beam;
- developing said resist film thus exposed to form a resist pattern;
- exposing said underlying film through said resist pattern used as a mask to an irradiation of light;
- and
- developing an exposed region of said underlying film.
Dependencies are inferred from the claim text.