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AssigneeApplied Materials, Inc.
InventorsKenneth Collins, Michael Rice, John Trow, Douglas Buchberger, Eric Askarinam, Joshua Tsui, David Groechel, Raymond Hung
Estimating the term…
There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
A plasma reactor capable of controlling radial distribution of plasma ion density across a workpiece surface, comprising:
A plasma reactor capable of controlling radial distribution of plasma ion density across a workpiece surface, comprising:
A plasma reactor capable of controlling radial distribution of plasma ion density across a workpiece surface, comprising:
Dependencies are inferred from the claim text.