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US 6,051,492 AGranted
Method of manufacturing a wiring layer in semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsByung-lyul Park, Hyoung-sub Kim, Jung-min Ha
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Abstract
A method of manufacturing a metal wiring layer in a semiconductor device, wherein an insulating layer is plasma treated before a tungsten nitride film is formed on the insulating layer. A metal, metal silicide or metal alloy thereafter being deposited over the tungsten nitride film.
Claims14
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating layer on a semiconductor substrate;
- forming a contact hole in the insulating layer to expose a portion of the semiconductor substrate;
- plasma treating the insulating layer with an RF or ECR plasma using a non-active gas;
- depositing a tungsten nitride film in at least the contact hole;
- and
- forming a metal wiring layer on the tungsten nitride film.
3 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming an insulating layer on a semiconductor substrate, the insulating layer including a contact hole therein;
- plasma treating the insulating layer including the contact hole with an RF or ECR plasma using a non-active gas;
- depositing a tungsten nitride film in at least the contact hole, after performing the step of plasma treating the insulating layer including the contact hole;
- and
- forming a metal wiring layer on the tungsten nitride film.
2 more elements
Dependencies are inferred from the claim text.