Void-free underfill of surface mounted chips

A process for underfilling a device on a substrate comprising:

• positioning the device on a substrate such that a space is created between the device and the substrate, the device having a plurality of sides;
• substantially enclosing the plurality of sides of the device with a dam;
• inserting an underfill material into at least a first opening in the dam;
• and
• drawing the underfill material into the space toward a second opening in the dam with a continuous vacuum.

An apparatus for allowing uniform flow of underfill material in interstices between a semiconductor device and a substrate, the apparatus comprising:

• a first dam adjacent a first section of the semiconductor device and a second dam adjacent a second section of the semiconductor device;
• an underfill dispenser positioned proximate the first dam which injects underfill material into the interstices between the semiconductor device and the substrate;
• and
• a vacuum cup positioned proximate the second dam, wherein the vacuum cup provides a continuous suction force to draw the underfill material throughout the interstices.

A device for obtaining a void-free underfill in the space between a semiconductor device and a substrate, the device comprising:

• means for substantially enclosing the semiconductor device;
• means for injecting underfill material into the space between the semiconductor device and the substrate;
• and
• means for continuously drawing the underfill material throughout the space.

A process for underfilling a device on a substrate comprising:

• positioning the device on a substrate such that a space is created between the device and the substrate, the device having a plurality of sides;
• enclosing the plurality of sides of the device with a dam;
• inserting an underfill material into an aperture in the substrate within the area beneath the device, and
• drawing the underfill material into the space toward an opening in the dam with a continuous vacuum.

A semiconductor mounting device comprising:

• a substrate having a plurality of electrical contacts;
• a semiconductor device connected to the plurality of electrical contacts of the substrate such that a gap is formed between the semiconductor device and the substrate;
• a first dam positioned proximate a first side and a second side of the semiconductor device;
• a second dam positioned proximate a third side and a fourth side of the semiconductor device, and
• an underfill material positioned within the gap formed between the semiconductor device and the substrate to completely fill the gap, the underfill material extending from the first dam to the second dam, wherein the underfill material flows into the gap while applying a vacuum.