Washing apparatus and washing method
AssigneesMitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering Corporation
InventorsItaru Kanno, Toshiaki Ohmori, Hiroshi Tanaka, Nobuaki Doi
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Abstract
The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.
Claims7
A method for removing a contamination adhering onto a surface of a semiconductor substrate, comprising the steps of:
- directing an outlet of a jet nozzle toward a semiconductor substrate;
- supplying a liquid to said jet nozzle;
- supplying a gas to said jet nozzle;
- mixing said liquid and said gas in said jet nozzle to form a droplet of the liquid;
- and
- jetting out said droplet toward the surface of said semiconductor substrate with the sonic velocity to remove said contamination;
- wherein
- liquid and gas supply pressures are set so that the grain size of said droplet is 1 .mu.m to 100 .mu.m.
A method of
- washing a surface of a semiconductor substrate with washing solution, the method comprising:
- forming a droplet of pure water;
- and
- jetting out said droplet toward the surface of said semiconductor substrate with the sonic velocity to wash the surface of the semiconductor substrate;
- wherein
- the grain size of said droplet is 1 .mu.m to 100 .mu.m.
A washing method, comprising the steps of:
- preparing a semiconductor substrate;
- forming a droplet of washing solution;
- and
- jetting out said droplet toward a surface of said semiconductor substrate with the sonic velocity to wash the surface of the semiconductor substrate;
- wherein
- the grain size of said droplet is 1 .mu.m to 100 .mu.m.
A washing method, comprising the steps of:
- preparing a semiconductor substrate;
- forming a droplet of washing solution;
- forming a droplet of pure water;
- jetting out said droplet of the washing solution toward a surface of said semiconductor substrate with the sonic velocity;
- and subsequently
- jetting out of said droplet of said pure water toward a surface of said semiconductor substrate with the sonic velocity to wash the surface of the semiconductor substrate;
- wherein
- the grain size of said droplet is 1 .mu.m to 100 .mu.m.
Dependencies are inferred from the claim text.