Formation of nonlinear dielectric films for electrically tunable microwave devices
AssigneeThe Regents of the Universitiy of California
InventorsQuanxi Jia, Alp T. Findikoglu
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Abstract
A thin film structure including a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of a nonlinear dielectric material thereon the thin layer of homoepitaxial lanthanum aluminum oxide is provided together with microwave and electro-optical devices including such a thin film structure.
Claims13
A thin film structure comprising a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of a nonlinear dielectric material thereon said thin layer of homoepitaxial lanthanum aluminum oxide.
A thin film structure comprising a lanthanum aluminum oxide substrate, a thin layer of homoepitaxial lanthanum aluminum oxide thereon, and a layer of superconducting material thereon said thin layer of homoepitaxial lanthanum aluminum oxide.
A method of making a microwave device comprising:
- forming a thin layer of homoepitaxial lanthanum aluminum oxide situated directly between a lanthanum aluminum oxide substrate and a layer of nonlinear dielectric material;
- and,
- forming a layer of superconducting material on the layer of nonlinear dielectric material.
Dependencies are inferred from the claim text.