Circuit structure with an anti-reflective layer

A circuit structure comprising:

• a silicon wafer;
• a reflective layer disposed on said silicon wafer, said reflective layer being electrically conductive and having a reflectivity of between about 50% and about 90%;
• a dielectric layer disposed over said reflective layer;
• and
• a layer of chromium oxide/suboxide disposed on said dielectric layer, wherein said chromium oxide/suboxide layer consists essentially of chromium and oxygen in a stoichiometric ratio of between about 1:1 and about 4:1 Cr:O, wherein said chromium oxide/suboxide layer is substantially free of nitrogen.

A device comprising:

• a substrate;
• a highly reflective layer disposed on the substrate;
• and
• a layer of chromium oxide/suboxide that is substantially free of nitrogen disposed on the highly reflective layer.

An electronic semiconductor device structure comprising:

• a silicon wafer;
• a layer of a conductive material disposed on the silicon wafer, the conductive material selected from the group consisting of aluminum, aluminum-copper alloy, silicide, and polycide;
• and
• a layer of chromium-suboxide disposed on the layer of the conductive material, the layer of chromium-suboxide consisting essentially of chromium and oxygen in a ratio of between 1:1 and 4:1 Cr:O, said chromium-suboxide layer having an imaginary refractive index that is at least about 1.0 and being substantially free of nitrogen.

A circuit structure on a substrate comprising:

• a reflective layer, said reflective layer being electrically conductive and having a reflectivity of between about 50% and about 90%;
• and
• a layer of chromium oxide/suboxide disposed on said reflective layer, wherein said chromium oxide/suboxide layer consists essentially of chromium and oxygen in a stoichiometric ratio between about 1:1 and about 4:1 Cr:O;
• said chromium oxide/suboxide layer having an imaginary refractive index that is at least about 1.0, and wherein said chromium oxide/suboxide layer is substantially free of nitrogen.

A circuit structure on a substrate, said structure comprising:

• a highly reflective layer disposed on the substrate;
• a layer of chromium oxide/suboxide disposed on the reflective layer, said chromium oxide/suboxide layer comprising chromium and oxygen in a ratio of between 1:1 and 4:1 Cr:O;
• and
• said chromium oxide/suboxide layer being substantially free of nitrogen and being adapted to have a circuit layer disposed thereon.