Electron-beam-projection-exposure apparatus with integrated mask inspection and cleaning portions

A method for removing contamination from a mask having a defined mask pattern and for transferring the mask pattern onto a sensitized substrate after the contamination is removed, the method comprising the steps:

• (a) at a first position of the mask, projecting an electron beam onto the mask using an electron beam source;
• (b) detecting electrons of the electron beam that are emitted from a point of contamination on the mask;
• (c) determining positional coordinates of the point of contamination on the mask based on the detected emitted electrons
• (d) cleaning the mask at the point of contamination;
• and
• (e) after cleaning the mask, illuminating an electron beam onto the mask using the same electron beam source to projection-transfer the mask pattern onto a sensitized substrate.

An electron-beam-exposure apparatus for projecting a mask pattern onto a photosensitive substrate, comprising:

• (a) an electron gun that produces an electron beam;
• (b) an electron-beam-zoom-illumination system situated so as to illuminate the electron beam emitted from the electron gun onto a mask defining the mask pattern;
• (c) a mask stage for supporting the mask;
• (d) a deflector
• (e) an emitted-electron detector situated so as to detect electrons from the electron beam that are emitted from the mask;
• and
• (f) a contamination-inspection-data analyzer connected to the emitted-electron detector for comparing data received from the electron detector to stored data concerning the topography of the mask to determine if contamination is present at any of various locations within the region;
• (g) wherein the electron gun is used for detecting contamination and for projecting the mask pattern onto the photosensitive substrate.

An electron-beam-exposure apparatus for projecting a mask pattern onto a sensitized substrate, comprising:

• (a) means for illuminating an electron beam onto a mask and for scanning the electron-beam over the mask;
• (b) means for detecting contamination by sensing electrons of the electron-beam emitted from the mask at a point of contamination on the mask;
• and
• (c) wherein the means for illuminating used for detecting contamination are the same means for projecting a mask pattern onto a sensitized substrate.