US 6,037,613 A · Bidirectional thyristor device

Abstract

In a bidirectional photothyristor formed on a single N type silicon substrate, a distance between a P-gate diffusion region of one thyristor and an anode diffusion region of another thyristor opposed thereto is set to be 40 to 1,000 .mu.m, preferably, 70 to 600 .mu.m, thereby eliminating a malfunction caused by a noise due to a differentiation circuit which is composed of parasitic resistors and junction capacitances. In a field portion between the P-gate diffusion region and the anode diffusion region, an oxygen-doped semi-insulating film is formed via an SiO.sub.2 film, and an Al conductor is removed to form a field light receiving portion. Unlike a P-gate light receiving portion formed in the P-gate diffusion region, the field light receiving portion does not involve a junction capacitance. Therefore, a light sensitivity can be enhanced without lowering a dV/dt resistance.

Claims20

Dependent claims

A bidirectional thyristor device comprising a pair of planar type thyristors with a PNPN lateral structure, said pair of planar type thyristors being connected in antiparallel and having overlapping channels and said pair of planar type thyristors being formed on a single semiconductor substrate, wherein intervals in a range from 40 .mu.m to 1,000 .mu.m are provided between a P-gate diffusion region of one thyristor and an anode diffusion region of the other thyristor and between an anode diffusion region of the one thyristor and a P-gate diffusion region of the other thyristor.

A bidirectional thyristor device comprising:

a semiconductor substrate;
and
a lateral arrangement in said semiconductor substrate of anode and gate diffusion regions of a first thyristor and anode and gate diffusion regions of a second thyristor, a cathode diffusion region of said first thyristor being formed in said gate diffusion region of said first thyristor and a cathode diffusion region of said second thyristor being formed in said gate diffusion region of said second thyristor,
wherein said first and second thyristors are connected in antiparallel and have overlapping channels, and
wherein a distance L1 between the anode diffusion region of said second thyristor and the gate diffusion region of said first thyristor is in a range from 40 .mu.m to 1000 .mu.m and a distance L2 between the anode diffusion region of said first thyristor and the gate diffusion region of said second thyristor is in a range from 40 .mu.m to 1000 .mu.m.

2 more elements

Dependencies are inferred from the claim text.

Bidirectional thyristor device

Life of this patent

Bidirectional thyristor device

Life of this patent

Abstract

Claims20