Process for removing residues from a semiconductor substrate
AssigneeOlin Microelectronic Chemicals, Inc.
InventorsM. Lee Love, Jr., Kenji Honda
Life of this patent
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Abstract
A process of treating a substrate having photoresist applied thereto, comprising the steps of: (a) removing said photoresist from said substrate by a method selected from the group consisting of photoresist stripping, plasma etch residue cleaning, or a combination thereof; and (b) rinsing said substrate with a non-corrosive rinsing composition comprising (1) water; and (2) one or more water-soluble corrosion inhibitors selected from the group consisting essentially of hydroxylamine, at least one hydroxylammonium salt, at least one water-soluble organic acid, at least one amino acid, and combinations thereof.
Claims22
A process for removing residues from a substrate bearing said residues, wherein said residues comprise photoresist residues, post-etch residues, remover solution residues and combinations thereof, comprising treating the residue-bearing substrate with a rinse solution comprising about 97 to 99.9 wt. % water and about 0.1 to 3 wt. % of at least one water-soluble corrosion inhibitor selected from the group consisting of hydroxylamine, at least one hydroxylammonium salt, at least one water-soluble organic acid, at least one amino acid, and combinations thereof, wherein the weight percentages are based on the total weight of said rinse solution.
A process for removing a patterned photoresist layer and residues comprising photoresist residues, post-etch residues, remover solution residues and combinations thereof, from a substrate which has a patterned photoresist layer thereon and which has been subjected to an etching operation, comprising the steps of:
- (1) removing said patterned photoresist layer from said substrate;
- (2) treating said substrate with a remover solution;
- and
- (3) rinsing said substrate with a non-corrosive rinse solution comprising about 97 to 99.9 wt. % water and about 0.1 to 3 wt. % of at least one water-soluble corrosion inhibitor selected from the group consisting of hydroxylamine, at least one hydroxylammonium salt, at least one water-soluble organic acid, at least one amino acid, and combinations thereof, wherein the weight percentages are based on the total weight of said non-corrosive rinse solution.
Dependencies are inferred from the claim text.