Oxide film fabrication method and electronic device

A method for forming an oxide film, the method comprising:

• depositing a first film layer including a metal oxide material on a substrate of a thin film magnetic head, wherein the depositing of the first film layer is performed by bias sputtering;
• and
• depositing a second film layer including the metal oxide material on the first film layer, wherein the depositing of the second film layer is performed by ion beam sputtering, wherein the metal oxide material of the first film layer has a first degree of purity greater than a second degree of purity of the metal oxide material of the second film layer.

A method for forming an oxide film, the method comprising:

• depositing a first film layer including a metal oxide material on a substrate of a thin film magnetic head, wherein the depositing of the first film layer is performed by ion beam sputtering;
• and
• depositing a second film layer including the metal oxide material on the first film layer, wherein the depositing of the second film layer is performed by bias sputtering, wherein the metal oxide material of the first film layer has a first degree of purity greater than a second degree of purity of the metal oxide material of the second film layer.