Back irradiation type light-receiving device and method of making the same
AssigneeHamamatsu Photonics K.K.
InventorsMasaharu Muramatsu, Hiroshi Akahori
Life of this patent
Estimating the term…
Abstract
A back irradiation type light-receiving device, on which light is incident from the back side with respect to a charge-reading section of a semiconductor thin plate, is provided with a reinforcement member on the charge-reading section side. Electric signals are fed in and out from the charge-reading section by way of a polysilicon lead having a short wiring length and a low-resistance aluminum lead which is formed, after the completion of all the steps requiring a high-temperature treatment, so as to be physically and electrically direct-connected to the polysilicon lead. Accordingly, a charge generated in response to the received light can be read out with a high efficiency, while enabling a high-speed operation.
Claims3
A back irradiation type light-receiving device, in which a charge-reading section having a one-dimensional or two-dimensional arrangement is formed on a first surface of a semiconductor thin plate mainly composed of silicon, for detecting an energy of an electromagnetic wave or charged particle incident on a second surface of said semiconductor thin plate, said second surface being a back side of said first surface, said device comprising:
- a reinforcement member disposed on said first surface side of said semiconductor thin plate;
- a field oxide film, formed in contact with said reinforcement member around a region where said charge-reading section is formed, exposing a surface thereof opposing an interface with respect to said reinforcement member while excluding at least a peripheral portion of said charge-reading section;
- a polysilicon lead formed on said charge-reading section and at a region extending from said charge-reading section at the interface between said field oxide film and said reinforcement member to the exposed region of said field oxide film;
- and
- a metal lead made of aluminum or an alloy or compound of aluminum, formed on the exposed region of said field oxide film, and physically and electrically direct-connected to said polysilicon lead, said metal lead having a bonding pad portion for external connection on said first surface side.
Dependencies are inferred from the claim text.