All-metal, giant magnetoresistive, solid-state component
AssigneeIntegrated Magnetoelectronics Corporation
InventorsE. James Torok, Richard Spitzer
Life of this patent
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Abstract
A solid-state component is described which includes a network of thin-film elements. At least one thin-film element exhibits giant magnetoresistance. The network has a plurality of nodes, each of which represents a direct electrical connection between two of the thin-film elements. First and second ones of the plurality of nodes comprise power terminals. Third and fourth ones of the plurality of nodes comprise an output. A first conductor is inductively coupled to the at least one thin-film element for applying a first magnetic field thereto.
Claims24
A logic gate comprising:
- a plurality of solid-state components, each of the solid-state components comprising:
- a network of thin-film elements, at least one thin-film element exhibiting giant magnetoresistance, the network having a plurality of nodes, each node representing a direct electrical connection between two of the thin-film elements, first and second ones of the plurality of nodes comprising power terminals, and third and fourth ones of the plurality of nodes comprising an output;
- and
- at least one conductor inductively coupled to the at least one thin-film element for applying a first magnetic field thereto.
A memory device, comprising:
- a plurality of memory elements;
- and
- selection circuitry coupled to the memory elements for communicating therewith, the selection circuitry comprising a plurality of solid-state components, each of the solid-state components comprising:
- a network of thin-film elements, at least one thin-film element exhibiting giant magnetoresistance, the network having a plurality of nodes, each node representing a direct electrical connection between two of the thin-film elements, first and second ones of the plurality of nodes comprising power terminals, and third and fourth ones of the plurality of nodes comprising an output;
- and
- at least one conductor inductively coupled to the at least one thin-film element for applying a first magnetic field thereto.
A method for operating a solid-state component as a logic gate, the solid-state component comprising a network of thin-film elements, at least one thin-film element exhibiting giant magnetoresistance, the network having a plurality of nodes, each node representing a direct electrical connection between two of the thin-film elements, first and second ones of the plurality of nodes comprising power terminals, and third and fourth ones of the plurality of nodes comprising an output, the solid-state component also comprising at least one conductor inductively coupled to the at least one thin-film element for applying a magnetic field thereto, the method comprising the steps of:
- setting a switching threshold for the solid-state component, wherein the output of the solid-state component switches where a total field from the at least one conductor exceeds the switching threshold;
- and
- applying an input signal to the solid-state component via the at least one conductor.
A method for linear operation of a solid-state component, the solid state component comprising a network of thin-film elements, at least one thin-film element exhibiting giant magnetoresistance, the network having a plurality of nodes, each node representing a direct electrical connection between two of the thin-film elements, first and second ones of the plurality of nodes comprising power terminals, and third and fourth ones of the plurality of nodes comprising an output, the solid-state component also comprising a conductor inductively coupled to the at least one thin-film element for applying a magnetic field thereto, the method comprising the step of substantially eliminating hysteresis from the at least one thin-film element exhibiting giant magnetoresistance.
Dependencies are inferred from the claim text.