Photoresist stripping without degrading low dielectric constant materials
AssigneeAdvanced Micro Devices, Inc.
InventorsDawn Hopper, Richard J. Huang, Jacques Bertrand, Lu You
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Abstract
Photoresist masks are stripped using a H.sub.2 -N.sub.2 plasma to prevent increasing the dielectric constant of an exposed carbon-containing dielectric material. Embodiments of the present invention include forming a low dielectric constant, carbon-containing layer, e.g., a polymeric layer, on an exposed metal feature overlying a wafer, forming a photoresist mask on the dielectric layer, forming an opening in the dielectric layer exposing the metal feature and a portion of the dielectric layer, preheating the wafer and stripping the photoresist mask using the H.sub.2 -N.sub.2 plasma.
Claims18
A method of manufacturing a semiconductor device, the method comprising:
- depositing a carbon-containing dielectric layer;
- forming a photoresist mask on the carbon-containing dielectric layer;
- forming an opening in the carbon-containing layer;
- and
- removing the photoresist mask with a plasma containing hydrogen and nitrogen, wherein said plasma contains about 1 to about 10 vol % hydrogen and about 90 to about 99 vol % nitrogen.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a carbon-containing dielectric layer;
- forming a photo resist mask on the carbon-containing dielectric layer;
- forming an opening in the carbon-containing layer;
- and
- removing the photo resist mask with a plasma consisting of hydrogen and nitrogen.
Dependencies are inferred from the claim text.