High Tc superconducting ferroelectric variable time delay devices of the coplanar type

A ferroelectric variable time delay device having a ferroelectric material having an electric field dependent permittivity, a Curie temperature, an input, an output, operating frequency and comprising:

• first, second and third layers;
• said first layer comprised of a single crystal dielectric substrate;
• said second layer comprised of a film of said single crystal ferroelectric material having said permittivity deposited on the single crystal dielectric material of said first layer;
• said single crystal ferroelectric material being Sr.sub.1-x Pb.sub.x TiO.sub.3 and the value of x being between 0.005 and 0.7;
• said third layer comprised of a film of a single crystal high Tc superconducting material deposited on the film of said single crystal ferroelectric material of said second layer;
• said third layer being a spiral shaped coplanar waveguide (CPW) having two arms;
• separation distance between said two arms of said spiral being constant;
• said two arm spiral shaped coplanar waveguide having 1, 2, . . . n turns;
• means for applying a bias voltage to said two arms of said CPW time delay device;
• a microprocessor for controlling said bias voltage, for a specific value of time delay, on command;
• and
• means attached to said time delay device, for operating the time delay device at a high superconducting temperature.

A ferroelectric variable time delay device having a ferroelectric material having an electric field dependent permittivity, a Curie temperature, an input, an output, operating frequency and comprising:

• said first, second, and third layers;
• said first layer comprised of a single crystal dielectric substrate;
• said second layer comprised of a film of a single crystal ferroelectric material deposited on the single crystal dielectric material of first layer;
• said ferroelectric material being Sr.sub.1-x Pb.sub.x TiO.sub.3 where the value of x being between 0.005 and 0.7;
• said third layer comprised of a film of a single crystal high Tc superconducting material deposited on the film of said single crystal ferroelectric material of second layer;
• said third layer being an interdigital shaped coplanar waveguide (CPW) having two arms;
• separation distance between said two arms of said interdigital shaped CPW being constant;
• said two arm interdigital shaped coplanar waveguide having 1, 2 . . . n fingers;
• means for applying a bias voltage to said two arms of said CPW delay device;
• a microprocessor for controlling said bias voltage, for a specific value of time delay, on command;
• and
• means attached to said time delay device for operating the time delay device at a high Tc superconducting temperature.