Active matrix substrate with removal of portion of insulating film overlapping source line and pixel electrode and method for producing the same

A method for producing an active matrix substrate including:

• a substrate;
• a plurality of first lines formed on the substrate to be parallel to each other;
• a gate insulating film covering the first lines;
• a plurality of second lines formed on the substrate extending to cross the first lines with the gate insulating film interposed therebetween;
• a plurality of switching elements provided near respective crossings of the first lines and the second lines;
• an interlayer insulating film covering the gate insulating film, the second lines, and the switching elements;
• and a plurality of pixel electrodes arranged in a matrix on the interlayer insulating film which are connected to the switching elements, respectively, the method including the steps of:
• forming the first lines on the substrate;
• forming gate electrodes of the switching elements on the substrate;
• forming the gate insulating film on an entire surface of the substrate to cover the first lines;
• removing portions of the gate insulating film;
• forming the second lines over the gate insulating film;
• forming source and drain electrodes of the switching elements over the gate insulating film;
• forming the interlayer insulating film on the entire surface of the substrate;
• and
• forming the pixel electrodes on the interlayer insulating film;
• wherein the interlayer insulating film is formed to have sufficient thickness such that the pixel electrode formed thereon has a substantially flat surface;
• wherein the step of removing the portions of the gate insulating film is conducted prior to the step of forming the second lines, and the removed portions of the gate insulating film is determined so as to be positioned below the pixel electrodes and not to include portions thereof positioned in regions where the first lines and the switching elements are provided.

An active matrix substrate comprising:

• a substrate;
• a plurality of first lines formed on the substrate to be parallel to each other;
• an insulating film covering the first lines;
• a plurality of second lines formed on the substrate extending to cross the first lines with the insulating film interposed therebetween;
• a plurality of switching elements provided near respective crossings of the first lines and the second lines;
• and
• a plurality of pixel electrodes arranged in a matrix on the insulating film which are connected to the switching elements, respectively;
• wherein gaps are provided between the second lines and the pixel electrodes;
• wherein portions of the insulating film corresponding to the gaps are removed;
• and wherein the removed portions of the insulating films overlap with the pixel electrodes and the second lines.

An active matrix substrate comprising:

• a substrate;
• a plurality of first lines formed on the substrate to be parallel to each other;
• a gate insulating film covering the first lines;
• a plurality of second lines formed on the substrate extending to cross the first lines with the gate insulating film interposed therebetween;
• a plurality of switching elements provided near respective crossings of the first lines and the second lines;
• an interlayer insulating film covering the gate insulating film, the second lines, and the switching elements;
• a plurality of pixel electrodes arranged in a matrix on the interlayer insulating film which are connected to the switching elements, respectively, and
• wherein the interlayer insulating film is formed to have sufficient thickness such that the plurality of pixel electrodes formed thereon have a substantially flat surface;
• wherein portions of the gate insulating film are removed away so that the removed portions are positioned below the pixel electrodes and do not include portions thereof positioned in regions where the first lines and the switching elements are provided.