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US 6,025,243 AGranted
Method for preparing a semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorsKazuaki Ohmi, Osamu Ikeda, Shigeyuki Matsumoto
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Abstract
A deposited film formation method comprises the steps of: (a) feeding a gas of an organometallic compound containing molybdenum atom and hydrogen gas onto a substrate having an electron donative surface; and (b) maintaining the temperature of the electron donative surface within the range of the decomposition temperature of the organometallic compound or lower and 800.degree. C. or lower to form a molybdenum film on the electron donative surface.
Claims1
A method for preparing a semiconductor device comprising the steps of:
- forming a film comprising an insulating material on a semiconductor substrate,
- forming an opening on said film to have a semiconductor substrate or a conductor surface exposed,
- embedding an electroconductive material in said opening to form a barrier metal,
- wherein a reaction is carried out between a gas of Mo(CH.sub.3).sub.6 and hydrogen gas at a temperature of 350.degree. C. to 550.degree. C. to deposit molybdenum selectively in said opening, thereby forming said barrier metal, and
- forming an aluminum film on said barrier metal to form an electrical wiring .
2 more elements
Dependencies are inferred from the claim text.