Method of forming a polysilicon diode and devices incorporating such diode
AssigneeMicron Technology, Inc.
InventorGurtej S. Sandhu
Life of this patent
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Abstract
A method for manufacturing a diode having a relatively improved on-off ratio. The diode is formed in a container in an insulative structure layered on a substrate of an integrated circuit. The container is then partially filled with a polysilicon material, by methods such as conformal deposition, leaving a generally vertical seam in the middle of the polysilicon material. An insulative material is deposited in the seam. The polysilicon material is appropriately doped and electrical contacts and conductors are added as required. The diode can be coupled to a chalcogenide resistive element to create a chalcogenide memory cell.
Claims22
A method forming a diode on a semiconductor substrate assembly, comprising the steps of:
- providing a container in an insulative layer in said substrate assembly;
- forming a volume of polysilicon material within said container, said polysilicon material formed to leave a void within said polysilicon material;
- and
- forming a p-n junction within said volume of polysilicon material filling an insulating material within said void.
A method of forming a diode on a semiconductor substrate, comprising the steps of:
- depositing a volume of a insulating material on said substrate and forming a container therein;
- depositing a conformal layer of polysilicon material over said insulating material and said container formed therein, said volume of polysilicon material deposited to leave a generally central void therein;
- depositing a insulating material within said void;
- and
- doping said polysilicon to define a p-n junction within said volume of polysilicon material.
A method for forming a polysilicon diode on a semiconductor substrate, comprising the steps of:
- providing an electrode on a substrate;
- providing an insulating layer including a container defined therein, said container providing electrical access to said electrode;
- forming a conformal layer of polysilicon within said container, while defining a void within said container;
- doping said polysilicon material within said container to form p-n junction;
- and
- substantially filling said void with a insulative material.
A method for manufacturing a memory device having a memory cell therein, comprising the steps of:
- providing a semiconductor substrate;
- depositing a volume of a insulating material on said substrate and forming a container therein;
- depositing a conformal volume of polysilicon material within said container, said volume of polysilicon material deposited to leave a generally central void therein;
- depositing a insulating material within said void;
- doping said polysilicon to define a p-n junction within said volume of polysilicon material;
- and
- depositing a chalcogenide material in electrical communication with said polysilicon material.
A method of forming a diode in an integrated circuit, the method comprising the acts of:
- (a) forming a container having sidewalls in an insulative material formed on a substrate;
- (b) forming a layer of semiconductive material on the sidewalls of the container to create a peripheral semiconductive member having a substantially central void;
- and
- (c) doping the peripheral semiconductive material to create a diode.
Dependencies are inferred from the claim text.