Method of forming a pattern using polysilane

A method of forming a pattern, comprising:

• a) forming an insulating layer or conducting layer on a substrate;
• b) forming an organosilicon polymer film containing crosslinking agent on said insulating layer or conducting layer;
• c) subjecting said organosilicon polymer film to a crosslinking reaction by means of light or heat;
• d) forming a resist pattern on said organosilicon polymer film;
• e) etching said organosilicon polymer film with said resist pattern being employed as a mask, thereby forming an organosilicon polymer film pattern;
• and
• f) etching said insulating layer or conducting layer with said resist pattern and said organosilicon polymer film pattern being employed as a mask,
• wherein said organosilicon polymer is selected from the group consisting of
• a polysilane copolymer having a repeating unit selected from the group consisting of the following formulae (LPS-II) and (LPS-VI):
• ##STR60## wherein A is a bivalent organic group;
• R.sup.1 substituents are the same or different and are selected from the group consisting or hydrogen, optionally hydrocarbon group and silyl group;
• a polysilane copolymer having a repeating unit selected from the group consisting of the following formulae (ARPS-I) and (ARPS-II):
• ##STR61## wherein R.sup.3 is selected from the group consisting of hydrogen, optionally substituted hydrocarbon group having not more than four carbon atoms, silyl, and alkoxyl;
• R.sup.4 is selected from the group consisting of hydrogen, optionally substituted hydrocarbon having not more than four carbon atoms and silyl;
• R.sup.5 is selected from the group consisting of hydrogen, optionally substituted aryl and hydrocarbon having not more than four carbon atoms;
• m and n are positive integers;
• a polysilane dendrimer having the formula (PSD-I) or (PSD-II):
• ##STR62## wherein R is optionally a substituted hydrocarbon.