Lid assembly for high temperature processing chamber
AssigneeApplied Materials, Inc.
InventorsJonathan Frankel, Inna Shmurun, Visweswaren Sivaramakrishnan, Eugene Fukshansky
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AssigneeApplied Materials, Inc.
InventorsJonathan Frankel, Inna Shmurun, Visweswaren Sivaramakrishnan, Eugene Fukshansky
Estimating the term…
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
A lid assembly for a vapor deposition apparatus of the type having an enclosure housing a processing chamber, the lid assembly comprising:
An apparatus for fabricating an integrated circuit device comprising:
Dependencies are inferred from the claim text.