Lithographic mask and method for fabrication thereof
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsKee W. Rhee, Martin C. Peckerar, Christie R. K. Marrian, Elizabeth A. Dobisz
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Abstract
Improvement in resolution in terms of minimum feature sizes and proximity fects in an electronic mask is attained by making the mask using a high voltage electron beam which deflects or blocks backscattered electrons. The novel mask structure comprises a transparent support, an absorber layer disposed on said support, a dielectric layer disposed on said absorber layer, and a resist layer disposed on said dielectric layer. It is the dielectric layer which is credited for improving resolution in said mask which can be used a multiple number of times in printing a pattern for various applications, including electronic devices and integrated circuits.
Claims8
In a method for making an electronic mask using a high voltage electron beam, which mask comprises a support medium, an absorber layer disposed above said support medium, and a resist layer disposed above said absorber layer, the improvement comprising the step of providing a dielectric layer between said absorber layer and said resist layer, said dielectric layer having the function of preventing at least some electrons from reentering said resist layer.
In a method for making an electronic mask using an electron beam rated at about 10 to 100 kiloelectron volts, said mask comprising a support transparent to x-rays selected from silicon carbide, silicon nitride, biron nitride, diamond, silicon, and carbon;
- an absorber layer disposed on said support selected from tungsten and gold;
- and a negative resist disposed on said absorber layer selected from chemically amplified novolac resists;
- the improvement in the method for making said mask comprising the steps of providing a dielectric layer between said absorber layer and said resist layer about 1 to about 1000 nm thick, said dielectric layer having the function of reducing proximity effects in the pattern written with said electron beam on said resist.
Dependencies are inferred from the claim text.