Controlled cleaning process
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan W. Cheung
Life of this patent
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Abstract
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Claims48
A process for forming a film of material from a substrate, said process comprising steps of:
- introducing particles through a surface of a substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth;
- and
- providing energy to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
A method for forming a film of material from a single-crystal silicon wafer, the method comprising steps of:
- implanting hydrogen ions through a surface of the single-crystal silicon wafer to a selected depth underneath the surface, the hydrogen ions being at a concentration at the selected depth to define a layer to be removed above the selected depth;
- bonding the surface to a workpiece;
- and
- providing energy to a selected region of the substrate to initiate a controlled cleaving action at the selected depth in the substrate to free the layer from the substrate.
A method for forming a film of material from a single-crystal silicon wafer, the method comprising steps of:
- implanting hydrogen ions through a surface of the single-crystal silicon wafer to a selected depth underneath the surface, the hydrogen ions being at a concentration at the selected depth to define a layer to be removed above the selected depth;
- and
- directing a jet of high-pressure fluid at a selected region of the substrate to initiate a controlled cleaving action at the selected depth in the substrate to free the layer from the substrate.
Dependencies are inferred from the claim text.