Reusable substrate for thin film separation
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan W. Cheung
Life of this patent
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Abstract
A donor substrate (10) for forming multiple thin films of material (12). In one embodiment, a first thin film of material is separated or cleaved from a donor substrate by introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh, or cleaved, surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.
Claims15
A semiconductor substrate device comprising:
- a donor wafer having a cleaved surface;
- and
- a layer of particles disposed within said donor wafer a selected distance from and substantially parallel to said cleaved surface to define a layer of donor wafer material between said layer of particles and said cleaved surface.
A semiconductor substrate device comprising:
- a single-crystal silicon donor wafer having a cleaved surface approximately parallel to a major crystallographic plane;
- and
- a layer of particles implanted into said donor wafer through said cleaved surface a selected distance from said cleaved surface to define a layer of donor wafer material between said layer of particles and said cleaved surface.
Dependencies are inferred from the claim text.