Semiconductor laser and manufacturing method therefor

A semiconductor laser having a double hetero junction structure comprising:

• an active layer;
• cladding layers comprising an upper layer and a lower layer, said cladding layers sandwiching said active layer;
• and
• a current blocking layer comprising a stripe recess acting as a current passage, said current blocking layer being provided within at least one of said cladding layers;
• wherein said current blocking layer comprises two layers, a) one layer of said two layers being a non-absorption layer which absorbs no light, having a forbidden band gap greater than said active layer and including said stripe recess and b) another layer of said two layers being an absorption layer which absorbs light, having another forbidden band gap equal to or smaller than said active layer and including both said stripe recess and a slit extending traversely to said stripe recess.

An optical pick up system having a semiconductor laser as a light source for writing and reading of records, including a double hetero junction structure wherein said semiconductor laser comprising:

• a lower cladding layer;
• an active layer formed on said lower cladding layer;
• a current blocking layer formed on said active layer, said current blocking layer including a) a stripe recess acting as a current passage and b) a slit extending transversely to said stripe recess, said slit having a predetermined distance for vertical multi-mode oscillation and having no absorption loss, said current blocking layer comprising a plurality of layers, at least one layer of said plurality of layers absorbing light and at least another layer not absorbing light and said at least one layer of said plurality of layers including both said slit and said stripe recess and said at least another layer including only said stripe recess;
• and
• an upper cladding layer formed on said current blocking layer.

An optical pick up system having a semiconductor laser as a light source for writing and reading of records, including a double hetero junction structure wherein said semiconductor laser comprising:

• an active layer;
• cladding layers comprising an upper layer and a lower layer, said cladding layers sandwiching said active layer;
• and
• a current blocking layer comprising a stripe recess acting as a current passage, said current blocking layer being provided within at least one of said cladding layers;
• wherein said current blocking layer comprises two layers, a) one layer of said two layers being a non-absorption layer which absorbs no light, having a forbidden band gap greater than said active layer and including said stripe recess and b) another layer of said two layers being an absorption layer which absorbs light, having another forbidden band gap equal to or smaller than said active layer and including both said stripe recess and a slit extending traversely to said stripe recess.

A semiconductor laser having a double hetero-junction structure comprising:

• a lower clad layer;
• an active layer formed on said lower clad layer;
• a current blocking layer formed on said active layer, said current blocking layer including a) a stripe recess acting as a current passage and b) a slit extending transversely to said stripe recess, said current blocking layer comprising a plurality of layers, at least one layer of said plurality of layers absorbing light and at least another layer not absorbing light and said at least one layer of said plurality of lasers including both said stripe recess and said slit and said another layer including only said stripe recess;
• and
• an upper cladding layer formed on said current blocking layer.