Supply line controlled sense amplifier
AssigneeAdvanced Array Corporation
InventorSintiat Te
Life of this patent
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AssigneeAdvanced Array Corporation
InventorSintiat Te
Estimating the term…
A sense amplifier includes cross-coupled latch has a PMOS bias transistor for selectively connecting the cross-coupled latch to a supply voltage and has an NMOS bias transistor for selectively connecting the cross-coupled latch to ground potential. The conductivity of the PMOS bias transistor is controlled by a first bias signal having a magnitude dependent upon the supply voltage and, in a similar manner, the conductivity of the NMOS bias transistor is controlled by a second bias signal also having a magnitude dependent upon the supply voltage. When the supply voltage exceeds a predetermined level, the first and second bias signals are of respective magnitudes so as to slowly turn on the PMOS and NMOS bias signals. In this manner, the current flow is gradually increased to the sense circuit at high voltages, thereby minimizing noise and power consumption. When, on the other hand, the supply voltage drops below the predetermined level, the first and second bias signals are of respective magnitudes so as to rapidly turn on the PMOS and NMOS bias transistor potential. In this manner, current flow to the sense circuit is maximized at low supply voltages, thereby improving speeds at low supply voltages.
A DRAM comprising:
A method of sourcing current to sense circuits coupled to bit lines of a memory cell array, said method comprising the steps of:
Dependencies are inferred from the claim text.