Production method of oxide superconductive film

Abstract

The present invention can provide an oxide superconductive film with a smooth surface and at homogeneous thickness on a simple substrate structure at a high film formation rate. In a liquid phase epitaxial growth method for producing an ReBa.sub.2 Cu.sub.3 Ox film (3) (Rerepresents one selected from lanthanoids such as Y and Nd, and X represents the oxygen amount) having a 123 type crystal structure from a molten liquid (1), a substrate (2) surface is inclined by 1 degree to 44 degrees with respect to the molten liquid surface at the time of separating the film from the molten liquid after film formation. After separating the film from the molten liquid, the substrate is rotated at 300 rpm to 3000 rpm for 5 seconds to 5 minutes. The film formation atmosphere contains 2 at. % of oxygen and 98 at. % of nitrogen, and the film formation temperature is 900 to 970.degree. C.

Dependencies are inferred from the claim text.