US 6,008,065 A · Method for manufacturing a liquid crystal display

Abstract

A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate pad by sequentially depositing a first metal film and a second metal film on a substrate of a TFT area and a pad area, respectively, by a first photolithography process, forming an insulating film on the entire surface of the substrate on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern on the insulating film of the TFT area using a second photolithography process, forming a source electrode and a drain electrode composed of a third metal film in the TFT area using a third photolithography process, forming a protection film pattern which exposes a portion of the drain electrode and a portion of the gate pad on the substrate on which the source electrode and the drain electrode are formed using a fourth photolithography process, and forming a pixel electrode connected to the drain electrode and the gate pad on the substrate on which the protection film pattern is formed using a fifth photolithography process. By using this method it is possible to reduce the number of photolithography steps required for manufacture and to prevent a battery effect and generation of a hillock in the resulting structure.

Claims15

Dependent claims

A method for manufacturing a liquid crystal display, the method comprising the steps of:

(a) forming a gate electrode and a gate pad by a first photolithography process by sequentially depositing a first metal film and a second metal film over a substrate in a TFT area and a pad area, respectively;
(b) forming an insulating film over the entire surface of the substrate on which the gate electrode and the gate pad are formed;
(c) forming a semiconductor film over the insulating film of the TFT area using a second photolithography process;
(d) forming a source electrode and a drain electrode in the TFT area using a third photolithography process, the source electrode and drain electrode comprising a third metal film;
(e) forming a protection film pattern over the source electrode and the drain electrode in the TFT area and over the insulating film in the gate pad area, using a fourth photolithography process, the protection film pattern exposing a portion of the drain electrode and a top surface of the second metal film;
and
(f) forming first and second pixel electrode patterns over the substrate and the protection film pattern using a fifth photolithography process, the first pixel electrode pattern being connected to the drain electrode in the TFT area, and the second pixel electrode pattern being connected to the top surface of the second metal film of the gate pad in the pad area.

4 more elements

A method for manufacturing a liquid crystal display, the method comprising the steps of:

(a) forming a gate electrode and a gate pad by sequentially depositing a first metal film selected from the group of Al and Al-alloy, and a second metal film over a substrate of a TFT area and a pad area, respectively and then patterning the first and second metal films by a first photolithography process;
(b) forming a first insulating film over the entire surface of the substrate on which the gate electrode and the gate pad are formed;
(c) forming a patterned semiconductor film over the first insulating film in the TFT area by depositing an amorphous silicon film and a doped amorphous silicon film and patterning the amorphous silicon film and the doped amorphous silicon film by a second photolithography process;
(d) forming a source electrode and a drain electrode in the TFT area by depositing a third metal film and then patterning the third metal film by a third photolithography process;
(e) etching the doped amorphous silicon film between the source electrode and the drain electrode;
(f) forming a protection film over the source and drain electrodes in the TFT area and over the first insulating film in the gate pad region by depositing a second insulating film over the source and drain electrodes in the TFT area and over the first insulating film in the gate pad region and then etching away the second insulating film over a first portion of the drain electrode and over a second portion of the gate pad;
(g) etching away the first insulating film over the second portion of the gate pad;
and
(h) forming a first and second pixel electrode pattern over the substrate and the protection film pattern using a fifth photolithography process, the first pixel electrode pattern being connected to the drain electrode in the TFT area, and the second pixel electrode pattern being connected to the top surface of the second metal film of the gate pad in the pad area.

6 more elements

Dependencies are inferred from the claim text.

Method for manufacturing a liquid crystal display

Life of this patent

Method for manufacturing a liquid crystal display

Life of this patent

Abstract

Claims15