Method of preparing group III-V compound semiconductor crystal
AssigneeSumitomo Electric Industries, Ltd.
InventorsTomohiro Kawase, Masami Tatsumi
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Abstract
A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.
Claims22
A method of preparing a carbon-doped group III-V compound semiconductor crystal, comprising the steps of:
- placing a compound raw material, solid carbon, and a boron oxide substance into a crucible or a boat,
- sealing said crucible or boat containing said compound Law material, said solid carbon, and said boron oxide substance within an airtight vessel formed of a gas impermeable material,
- heating and melting said compound raw material in said crucible or said boat sealed within said airtight vessel, and
- solidifying said melted compound raw material to grow a carbon-doped compound semiconductor crystal,
- wherein an amount of said solid carbon placed into said crucible or said boat is larger than an amount of carbon doped into said compound semiconductor crystal.
Dependencies are inferred from the claim text.