Method of manufacturing semiconductor device
AssigneeTokyo Electron Limited
InventorsYoshihiro Tezuka, Kunihiro Tada
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Abstract
A method of manufacturing a semiconductor device, comprises the steps of, preparing a silicon substrate having a source region, a drain region, a gate electrode and an SiO.sub.2 film formed on one surface, depositing titanium on the one surface of the silicon substrate by CVD using a high frequency plasma of a low density to form a TiSi.sub.2 layer having a C54 crystal phase, so that the TiSi.sub.2 layer covers the source and drain regions and gate electrode, and a Ti layer covers the SiO.sub.2 film. The Ti layer formed on the SiO.sub.2 film is removed by a selective etching.
Claims5
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a substrate in a chemical vapor deposition chamber and between a pair of electrodes, said substrate having at least one of a silicon region and a polycrystalline silicon region on a first part of a surface of said substrate and a silicon compound film on a second part of said surface;
- applying a high frequency power to at least one electrode of said pair of electrodes;
- heating said substrate to a substrate temperature ranging from 620.degree. C. to 700.degree. C.;
- depositing titanium on said surface of the substrate by a chemical vapor deposition method using a high frequency plasma of a low density, said titanium, deposited on said one of a silicon region and a polycrystalline silicon region, reacting with one of silicon and polycrystalline silicon to form a titanium silicide (TiSi.sub.2) layer having a C54 crystal phase.
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a silicon substrate in a chemical vapor deposition (CVD) chamber and between a pair of electrodes, said substrate having a source region, a drain region, a gate electrode and an insulating film formed on a surface;
- applying a high frequency power to at least one electrode of said pair of electrodes;
- heating said substrate to a substrate temperature ranging from 620.degree. C. to 700.degree. C.;
- depositing titanium on said surface of the silicon substrate by CVD using a high frequency plasma of a low density to form a TiSi.sub.2 layer having a C54 crystal phase, said TiSi.sub.2 layer covering at least said source and drain regions, and a Ti layer covering said insulating film;
- and
- removing the Ti layer formed on the insulating film by selective etching.
Dependencies are inferred from the claim text.