Optical information recording medium
AssigneeMitsubishi Chemical Corporation
InventorsTakashi Ohno, Masao Komatsu, Masae Kubo, Masaaki Mizuno, Natsuko Nobukuni, Michikazu Horie, Haruo Kunitomo
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Abstract
An optical information recording medium for recording, retrieving and erasing mark length-modulated amorphous marks, which comprises a substrate, and a lower protective layer, a phase-change recording layer, an upper protective layer and a reflective layer having a thickness of from 40 to 300 nm and a volume resistivity of from 20 to 150 n.OMEGA..multidot.m, formed in this sequence on the substrate.
Claims42
An optical information recording medium for recording, retrieving and erasing mark length-modulated amorphous marks, which comprises a substrate, and a lower protective layer, a phase-change recording layer, an upper protective layer and a reflective layer having a thickness of from 40 to 300 nm and a volume resistivity of from 20 to 150 n.OMEGA..multidot.m, formed in this sequence on the substrate,
- wherein the phase-change recording layer is a thin film of an alloy of M.sub.w (Sb.sub.z Te.sub.1-z).sub.1-w, where 0.ltoreq.w.ltoreq.0.2, 0.5.ltoreq.z.ltoreq.0.9, and M is at least one member selected from the group consisting of In, Ga, Zn, Ge, Sn, Si, Cu, Au, Ag, Pd, Pt, Pb, Cr, Co, O, N, S, Se, Ta, Nb, V, Bi, Zr, Ti, Mn, Mo, Rh and rare earth elements.
An optical information recording medium for recording, retrieving and erasing mark length-modulated amorphous marks, which comprises a substrate, and a lower protective layer, a phase-change recording layer, an upper protective layer and a reflective layer having a thickness of from 40 to 300 nm and a volume resistivity of from 20 to 150 n.OMEGA..multidot.m, formed in this sequence on the substrate,
- wherein the reflective layer is an Al alloy containing from 0.2 to 2 atomic % of at least one member selected from the group consisting of Ta, Ti, Co, Cr, Si, Sc, Hf, Pd, Pt, Mg, Zr, Mo and Mn, or
- wherein the reflective layer is made of a Ag alloy containing from 0.2 to 5 atomic % of at least one member selected from the group consisting of Ti, V, Ta, Nb, W, Co, Cr, Si, Ge, Sn, Sc, Hf, Pd, Rh, Au, Pt, Mg, Zr, Mo and Mn.
Dependencies are inferred from the claim text.