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US 5,999,298 AGranted
Electroabsorption optical intesity modulator having a plurality of absorption edge wavelengths
AssigneeNEC Corporation
InventorMasashige Ishizaka
Life of this patent
Estimating the term…
Abstract
In an electroabsorption optical intensity modulator, a semiconductor buffer, a first semiconductor cladding layer, a semiconductor optical absorption layer, a second semiconductor cladding layer and a semiconductor cap layer are formed on a semiconductor substrate. Also, a first electrode is formed on the second semiconductor cap layer, and a second electrode is formed on a second surface of the semiconductor substrate. The semiconductor optical absorption layer includes a first semiconductor optical absorption layer element having a first absorption edge wavelength and a second semiconductor optical absorption layer element having a second absorption edge wavelength different from the first absorption edge wavelength.
Claims7
An electroabsorption optical intensity modulator comprising:
- a semiconductor substrate;
- a semiconductor buffer layer formed on a first surface of said semiconductor substrate;
- a first semiconductor cladding layer formed on said semiconductor buffer layer,
- a semiconductor optical absorption layer formed on said first semiconductor cladding layer, said semiconductor optical absorption layer including a first semiconductor optical absorption layer element having a first absorption edge wavelength and a second semiconductor optical absorption layer element having a second absorption edge wavelength different from said first absorption edge wavelength;
- a second semiconductor cladding layer formed on said semiconductor optical absorption layer;
- a semiconductor cap layer formed on said second semiconductor cladding layer;
- a first electrode formed on said semiconductor cap layer;
- and
- a second electrode formed on a second surface of said semiconductor substrate.
6 more elements
An electroabsorption optical intensity modulator comprising:
- an N-type InP substrate;
- an N-type InP buffer layer formed on a first surface of said N-type InP substrate;
- an N-type InP cladding layer formed on said N-type InP buffer layer,
- a multiple quantum well optical absorption layer formed on said N-type InP cladding layer, said multiple quantum well optical absorption layer including a first multiple quantum well optical absorption layer element consisting of first periods of InGaAsP/InGaAsP having a first absorption edge wavelength and a second multiple quantum well optical absorption layer element consisting of second periods of InGaAsP/InGaAsP having a second absorption edge wavelength different from said first absorption edge wavelength;
- a P-type InP cladding layer formed on said multiple quantum well optical absorption layer;
- a P-type InGaAs cap layer formed on said P-type InP cladding layer;
- a first electrode formed on said P-type InGaAs cap layer;
- and
- a second electrode formed on a second surface of said N-type TnP substrate.
6 more elements
An optical communication module comprising:
- a semiconductor electroabsorption optical intensity modulator;
- a first light condensing means for condensing an incident light to said semiconductor absorption optical intensity modulator;
- and
- a second light condensing means for condensing an outgoing light from said semiconductor electroabsorption optical intensity modulator to an optical fiber;
- said electroabsorption optical intensity modulator comprising:
- a semiconductor substrate;
- a semiconductor buffer layer formed on a first surface of said semiconductor substrate;
- a first semiconductor cladding layer formed on said semiconductor buffer layer,
- a semiconductor optical absorption layer formed on said first semiconductor cladding layer, said semiconductor optical absorption layer including a first semiconductor optical absorption layer element having a first absorption edge wavelength and a second semiconductor optical absorption layer element having a second absorption edge wavelength different from said first absorption edge wavelength;
- a second semiconductor cladding layer formed on said semiconductor optical absorption layer;
- a semiconductor cap layer formed on said second semiconductor cap layer;
- a first electrode formed on said semiconductor cap layer;
- and
- a second electrode formed on a second surface of said semiconductor substrate.
11 more elements
An optical communication system comprising a transmitter, a receiver and an optical means connected between said transmitter and said receiver,
- said transmitter comprising:
- a semiconductor electroabsorption optical intensity modulator;
- a first light condensing means for condensing an incident light to said semiconductor absorption optical intensity modulator;
- and a second light condensing means for condensing an outgoing light from said semiconductor electroabsorption optical intensity modulator to said optical means;
- said electroabsorption optical intensity modulator comprising:
- a semiconductor substrate;
- a semiconductor buffer layer formed on a first surface of said semiconductor substrate;
- a first semiconductor cladding layer formed on said semiconductor buffer layer,
- a semiconductor optical absorption layer formed on said first semiconductor cladding layer, said semiconductor optical absorption layer including a first semiconductor optical absorption layer element having a first absorption edge wavelength and a second semiconductor optical absorption layer element having a second absorption edge wavelength different from said first absorption edge wavelength;
- a second semiconductor cladding layer formed on said semiconductor optical absorption layer;
- a semiconductor cap layer formed on said second semiconductor cladding layer;
- a first electrode formed on said semiconductor cap layer;
- and
- a second electrode formed on a second surface of said semiconductor substrate.
11 more elements
Dependencies are inferred from the claim text.