Method for making three dimensional circuit integration
AssigneeInternational Business Machines Corporation
InventorsCharles Thomas Black, Joachim Norbert Burghartz, Sandip Tiwari, Jeffrey John Welser
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Abstract
The present invention relates to a method for interconnecting, through high-density micro-post wiring, multiple semiconductor wafers with lengths of about a millimeter or below. Specifically, the method of the present invention comprises etching at least one hole, defined by walls, at least partly through a semiconducting material; forming a layer of electrically insulating material to cover said walls; and forming an electrically conductive material on said walls within the channel of the hole. Microelectronic devices containing the micro-post wiring of the present invention are also disclosed herein.
Claims20
A method of manufacturing a microelectronic device comprising the steps of:
- (a) etching at least one hole defined by a wall and a channel at least partly through a wafer of a semiconductor material;
- (b) forming a layer of electrically insulating material to cover said wall;
- and
- (c) forming an electrically conductive material on said covered wall within said channel of said hole.
Dependencies are inferred from the claim text.