Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry

A method of forming a plurality of capacitors in a semiconductor memory device comprising the steps of:

• selectively removing substrate material to define a first set of containers having container sidewalls;
• forming sidewall spacers adjacent the container sidewalls;
• selectively removing remaining substrate material adjacent the spacers to define a second set of containers;
• and
• forming capacitors in the containers separated only by the spacers;
• and
• prior to defining the first set of containers:
• forming a plurality of bit line contact openings over the substrate, individual bit line contact openings having at least one sidewall;
• covering the at least one sidewall of the plurality of bit line contact openings with an insulating material;
• etching the insulating material to form sidewall spacers;
• and
• forming electrically conductive material in the bit line contact openings to provide bit line contacts,
• wherein the defining of the first set of containers includes selectively etching the first set of containers relative to the sidewall spacers and the electrically conductive material of the bit line contacts.