Silicon etching process for making microchannel plates
AssigneeNanoSciences Corporation
InventorsCharles P. Beetz, Jr., Robert W. Boerstler, John Steinbeck, David R. Winn
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Abstract
An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.
Claims26
A method of forming high aspect ratio channels at preselected locations in a silicon element comprising the steps of:
- (a) providing a p-doped silicon element having front and rear surfaces;
- (b) forming a plurality of pits in the front surface of the element at preselected locations on said surface;
- and
- (c) maintaining the front surface of the element and a counterelectrode in contact with an electrolyte while maintaining the element at a positive potential with respect to the counterelectrode, so that the element is etched preferentially at said pits to form channels extending side-by-side through the silicon element, from said front surface towards said rear surface.
A microchannel plate comprising an element having a front surface, a rear surface and a plurality of channels extending therethrough, said channels having interior surfaces, and a dynode material on said interior surfaces, said dynode material being selected from the group consisting of nitrogen and oxygen doped or undoped polysilicon;
- SnO.sub.2. Sb:SnO.sub.2 ;
- indium tin oxide (ITO);
- MgIn.sub.2 O.sub.4-x ;
- InGaO.sub.3-x ;
- ZnSnO.sub.3-x ;
- Zn.sub.2 In.sub.2 O.sub.5-x ;
- ZnGa.sub.2 O.sub.4-x ;
- Cr.sub.2 O.sub.3 ;
- MnO.sub.2-x and Mn.sub.2 O.sub.3-x (where 0.ltoreq.x.ltoreq.1);
- potassium silicides;
- calcium silicides;
- barium silicides;
- cesium silicides;
- magnesium silicides;
- manganese silicides;
- and Pb.sub.y O.sub.x (where 1.ltoreq.x.ltoreq.3 and 1.ltoreq.y.ltoreq.2).
A p-doped silicon body having a front surface, a rear surface and a plurality of channels extending therethrough at regularly spaced locations, at substantially constant center-to-center distances said channels having diameters between about 100 nm and 2 .mu.m and aspect ratios above about 20:1.
Dependencies are inferred from the claim text.