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AssigneeMitsubishi Materials Corporation
InventorsIchirou Shiono, Kazuo Watanabe, Hitoshi Maruyama, Akifumi Mishima, Satoru Mori, Jun-ichi Oda
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The present invention provides sputtering targets which are useful for depositing ferroelectric films and are resistant to crack generation during sputtering. The sputtering targets comprise a disk target which is formed using a sintered material including a compound oxide of Ba and Ti, Sr and Ti, or Ba, Sr and Ti, and which has a surface which has been subjected to grinding, wherein the scratches 4 formed on the surface of the disk target due to grinding have a pattern radiating from an arbitrary point on the plane of the surface of said disk target.
A sputtering target, which comprises a disk target, said disk target comprising a sintered material selected from the group consisting of a compound oxide of Ba and Ti, a compound oxide of Sr and Ti, and a compound oxide of Ba, Sr and Ti, said disk target having a surface, said surface defining a plane, and said surface having grooves, wherein said grooves form a pattern intersecting at an arbitrary point located on the plane defined by said surface of said disk target.
Dependencies are inferred from the claim text.