Semiconductor laser
AssigneeFuji Photo Film Co., Ltd.
InventorsToshiaki Fukunaga, Mitsugu Wada
Life of this patent
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Abstract
A semiconductor laser includes a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and a second clad layer formed in this order on a GaAs substrate which is a III-V group compound semiconductor. Each of the layers contains As and P, each of the first and second clad layers and the first and second optical waveguide layers is of a composition which matches with the GaAs substrate in lattice. The active layer is of a composition which induces compression strain on the GaAs substrate, and each of the first and second barrier layers is of a composition which induces tensile strain on the GaAs substrate, thereby compensating for the compression strain induced in the active layer.
Claims3
A semiconductor laser comprising a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and a second clad layer formed in this order on a GaAs substrate which is a III-V group compound semiconductor, wherein the improvement comprises that
- each of said layers contains As and P,
- each of the first and second clad layers and the first and second optical waveguide layers is of a composition which matches with the GaAs substrate in lattice,
- said active layer is of a composition which induces compression strain on the GaAs substrate, and
- each of the first and second barrier layers is of a composition which induces tensile strain on the GaAs substrate, thereby compensating for the compression strain induced in the active layer.
Dependencies are inferred from the claim text.