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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsShigenobu Maeda, Yasuo Yamaguchi, Hirotada Kuriyama, Shigeto Maegawa
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A field effect transistor occupying a small area and a semiconductor device using the same can be obtained. A gate electrode is provided on a substrate on which a source region is provided with a first interlayer insulating film interposed therebetween. The gate electrode is covered with a second interlayer insulating film. A contact hole for exposing a part of the surface of the source region is provided so as to penetrate through the first interlayer insulating film, the gate electrode, and the second interlayer insulating film. A sidewall surface of the contact hole is covered with a gate insulating film. A first semiconductor layer of a first conductivity type is provided on the surface of the source region in contact therewith up to the lower surface of the gate electrode. A channel semiconductor layer is provided on the surface of the first semiconductor layer up to the upper surface of the gate electrode. A second semiconductor layer of a first conductivity type serving as a drain region is provided on the channel semiconductor layer.
A semiconductor device controlling a flow of majority carriers by a voltage applied to a gate electrode, comprising:
A semiconductor device storing information in a capacitor provided at a crossing point of a bit line and a word line, and formed of a storage node, a capacitor insulating film, and a cell plate electrode, using a gate transistor, comprising:
A semiconductor device having an inverter circuit, comprising:
A semiconductor device having an inverter circuit, comprising:
A semiconductor device serving as a logic circuit in a cooperative operation of a first transistor and a second transistor, comprising:
A semiconductor device having an inverter circuit using a first transistor and a second transistor, comprising:
Dependencies are inferred from the claim text.