US 5,994,209 A · Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films

Abstract

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Claims18

Dependent claims

A process for forming an ultra-shallow doped region in a substrate in a chamber, said process comprising the steps of:

depositing a doped silicon oxide film on said substrate on a heater at a temperature of at least 500.degree. C. from a reaction of silicon, oxygen and dopants in said chamber, wherein said doped silicon oxide film includes dopant atoms, and wherein said chamber is at a pressure of between about 100-760 torr;
and
heating said doped silicon oxide film to diffuse said dopant atoms into said substrate to form said ultra-shallow doped region.

Dependencies are inferred from the claim text.

Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films

Life of this patent

Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films

Life of this patent

Abstract

Claims18