Temperature coefficient of offset adjusted semiconductor device and method thereof
AssigneeMotorola, Inc.
InventorsGordon D. Bitko, Andrew C. McNeil, David J. Monk
Life of this patent
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Abstract
A non-zero temperature coefficient of offset (Tco) in a semiconductor device (5) is adjusted by reducing the amount of adhesive material used to secure a first structure to a second structure. An adhesive layer (14) used to secure a sensor die (11) to a constraint die (12) in a pressure sensor application is reduced in thickness and/or formed so that adhesive material does not completely cover the constraint die (12). The Tco is further adjusted by reducing the amount and/or patterning the adhesive layer (18) used to secure the sensor (10) to its package (16).
Claims21
A method for adjusting a non-zero temperature coefficient of offset in a sensor having a sensor die, a base die having a mounting surface, and an adhesive layer securing the sensor die to the mounting surface of the base die, the method comprising the step of:
- forming the adhesive layer on the mounting surface of the base die to a thickness less than 20 micrometers.
A semiconductor device, comprising:
- a base substrate having a first major surface and a second major surface opposite the first major surface;
- a semiconductor die having a mounting surface, a sensing surface, a cavity extending from the mounting surface into the semiconductor die to form a diaphragm in the sensing surface, and a transducer formed on the diaphragm;
- and
- an adhesive layer disposed between the first major surface and the mounting surface and having a thickness of less than 20 micrometers (.mu.m), wherein the adhesive layer secures the semiconductor die to the base substrate and adjusts for a non-zero temperature coefficient of offset (Tco).
A temperature coefficient of offset (Tco) adjusted semiconductor device, comprising:
- a base substrate having a first major surface and a second major surface opposite the first major surface;
- a semiconductor die having a mounting surface and a sensing surface;
- a first patterned adhesive layer disposed between the first major surface and the mounting surface to secure the semiconductor die to the base substrate and adjust the Tco;
- a cavity extending from the second major surface towards the sensing surface to form a diaphragm in the sensing surface;
- and
- a transducer formed on the diaphragm.
An absolute pressure sensor, comprising:
- a constraint die having a first major surface and a second major surface opposite the first major surface;
- a sensor die having a mounting surface, a sensing surface, a cavity extending from the mounting surface to form a diaphragm in the sensing surface, and a transducer formed on the diaphragm;
- and
- an adhesive layer disposed between the first major surface and the mounting surface and covering less than an entirety of the first major surface, wherein the adhesive layer adjusts for a non-zero temperature coefficient of offset (Tco), secures the sensor die to the constraint die, and forms a hermetic seal.
Dependencies are inferred from the claim text.