Semiconductor device having ferroelectric capacitor structures

A semiconductor apparatus comprising:

• an MIS transistor having a drain region and a source region each of which is formed of an impurity diffusion region and formed on a surface of a semiconductor substrate;
• a first insulation film formed on said semiconductor substrate including said MIS transistor;
• a bit line contact plug comprising a refractory metal embedded in said first insulation film and having a lower end which is in contact with one of said drain region and said source region and an upper end which is made flush with an upper surface of said first insulation film;
• a capacitor contact plug comprising a refractory metal, embedded in said first insulation film and having a lower end which is in contact with the other one of said drain region and said source region and an upper end which is made flush with an upper surface of said first insulation film;
• a ferroelectric capacitor formed above said first insulation film and having a lower electrode, an interelectrode ferroelectric film and an upper electrode;
• a second insulation film formed above said ferroelectric capacitor and said first insulation film;
• a capacitor electric wire formed on said second insulation film for establishing a connection between said upper electrode of said ferroelectric capacitor and a top surface of said capacitor contact plug through a first contact hole selectively formed in said second insulation film;
• a bit line contact plug electric wire formed on said second insulation film and connected to a top surface of said bit line contact plug through a second contact hole selectively formed in said second insulation film;
• a third insulation film formed on said second insulation film including said capacitor electric wire and said bit line contact plug electric wire;
• and
• a bit line formed on said third insulation film by reflowing at least one material selected from a group consisting of Al, AlCu, AlCuSi and Cu and connected to said bit line contact plug electric wire through a via hole selectively formed in said third insulation film.