Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads

A method of chemical-mechanical polishing of a surface comprising:

• providing a polishing pad having:
• an abrasive material fixed in the polishing pad and a geometric center;
• an external surface thereon having at least one non-planar geometric pattern therein comprising:
• a plurality of structures within said external surface of said polishing pad, said plurality of structures including a first, second and third plurality of structures, said first plurality of structures being situated at the perimeter of said polishing pad and extending longitudinally to an intersection thereof at the geometric center of said polishing pad, said second plurality of structures being situated at the perimeter of said polishing pad and being oriented substantially parallel to said first plurality of structures, and said third plurality of structures being situated at the perimeter of said polishing pad and being oriented substantially parallel to said second plurality of structures, each structure of said second plurality of structures having a longitudinal length that is shorter than that of each structure of said first plurality of structures, and each structure of said third plurality of structures having a longitudinal length that is shorter than that of each structure of said second plurality of structures;
• providing a hydrophobic surface on a semiconductor substrate to be polished;
• wetting the surface on the semiconductor substrate and the polishing pad with a chemical polishing solution having a surface tension, .gamma..sub.lg, in a range from about 20 to 50 dynes/cm, wherein said polishing pad receives said polishing solution under pressure at the geometric center of said polishing pad, and wherein said polishing solution flows under a tangential and radial shear-flow path away from said geometric center of said polishing pad;
• and
• moving at least one of said polishing pad and semiconductor substrate in mutual contact.

A method of chemical-mechanical polishing of a surface comprising:

• providing a polishing pad having a front surface, a back surface, and an abrasive material fixed in the polishing pad;
• providing a hydrophobic surface on a semiconductor substrate to be polished;
• wetting the surface on the semiconductor substrate and the polishing pad with a chemical polishing solution flowing from the back surface of the polishing pad to the front surface of the polishing pad and under pressure at the geometric center of said polishing pad;
• and
• moving at least one of said polishing pad and semiconductor substrate in mutual contact.

A method of polishing a surface comprising:

• providing a polishing pad having:
• a geometric center and a perimeter;
• an abrasive material fixed in the polishing pad;
• an external surface including a plurality of non-planar structures, each said structure having a broken arcuate configuration that extends toward the perimeter and toward the geometric center of the polishing pad;
• wetting a surface on a semiconductor substrate and said polishing pad with a polishing solution;
• and
• moving at least one of said polishing pad and said semiconductor substrate in mutual contact.