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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsGaku Sugahara, Nobuo Aoi, Koji Arai, Kazuyuki Sawada
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A material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x Si(OR.sup.2).sub.4-x (where R.sup.1 is a phenyl group or a vinyl group; R.sup.2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R.sup.1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R.sup.1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:
A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:
Dependencies are inferred from the claim text.