Dual damascene metallization

A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising:

• a) depositing a barrier layer on exposed surfaces of the dielectric layer;
• b) chemical vapor depositing a conductive material on the barrier layer and annealing the conductive material to fill the via definition;
• and
• c) physical vapor depositing the conductive material on the annealed conductive material to fill the wire definition;
• and
• d) planarizing the conductive material, barrier layer, and dielectric layer to define a conductive wire.

A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising:

• a) depositing a barrier layer on exposed surfaces of the dielectric layer;
• b) chemical vapor depositing a first conductive material on the barrier layer;
• then
• c) annealing the first conductive material to fill the via definition;
• then
• d) physical vapor depositing the second conductive material on the annealed first conductive material to fill the wire definition;
• and
• e) planarizing the conductive material, barrier layer, and dielectric layers to define a conductive wire.

A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising:

• a) depositing a barrier layer on exposed surfaces of the dielectric layer;
• b) electroplating a conductive material on the barrier layer to fill the via definition;
• c) physical vapor depositing the conductive material to fill the wire definition, wherein the conductive material deposited by electroplating is annealed prior to the physical vapor deposition;
• and
• d) planarizing the conductive material and the barrier layer.

A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising:

• a) depositing a barrier layer on exposed surfaces of the dielectric layer;
• b) electroplating a first conductive material on the barrier layer;
• c) annealing the first conductive material;
• d) physical vapor depositing a second conductive material on the annealed conductive material to fill the via and wire definition;
• and
• e) planarizing the conductive material and barrier layer.

A method of forming a dual damascene interconnect in a dielectric layer having a dual damascene via and wire definition, comprising:

• a) depositing a barrier layer on exposed surfaces of the dielectric layer;
• b) chemical vapor depositing a first conductive material on the barrier layer;
• c) annealing the first conductive material to fill the via definition;
• d) chemical vapor depositing a second conductive material on the annealed first conductive material;
• e) annealing the second conductive material to fill the wire definition;
• and
• f) planarizing the conductive material, barrier layer, and dielectric layers to define a conductive wire.