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US 5,985,739 AGranted
Semiconductor structures having advantageous high-frequency characteristics and processes for producing such semiconductor structures
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsAndreas Plettner, Karl Haberger
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Abstract
A process is disclosed for producing a semiconductor structure with a highly conductive buried layer with the following steps: an insulating layer is applied to a first surface of a first semiconductor substrate, an insulating layer is applied on a surface of a layer of highly conductive material which is physically separate from the first semiconductor substrate and then the insulation layers are bonded together.
Claims32
A method for producing a semiconductor structure including a highly conductive buried layer, the method comprising:
- forming a first insulating layer on a first surface of a first semiconductor substrate;
- forming a second insulating layer on a surface of a highly conductive layer wherein the highly conductive layer comprises a highly conductive material, wherein all portions of the highly conductive layer are electrically coupled to each other to share a common electrical potential, wherein the highly conductive layer is physically separated from the first semiconductor substrate, and wherein the highly conductive layer is formed over a second semiconductor substrate;
- and
- connecting the first and second insulating layers.
1 more element
Dependencies are inferred from the claim text.