Electro-optical display

An electro-optical device comprising:

• a transistor provided on an insulating surface, said transistor including source and drain regions, a channel region, and a gate electrode adjacent to said channel region having a gate insulating film therebetween;
• a gate line electrically connected to said gate electrode;
• a first insulating film provided on said transistor;
• a contact hole provided in said first insulating film;
• a source line provided on said first insulating film and provided in said contact hole;
• a second insulating film provided on said first insulating film and said source line;
• a common electrode provided on said second insulating film;
• a third insulating film provided on said common electrode;
• and
• a pixel electrode provided on said third insulating film,
• wherein said pixel electrode overlaps said source line and said gate line with said common electrode interposed therebetween, and
• wherein said common electrode is maintained at constant potential.

An electro-optical device comprising:

• a transistor provided on an insulating surface, said transistor including source and drain regions, a channel region, and a gate electrode adjacent to said channel region having a gate insulating film therebetween;
• a gate line electrically connected to said gate electrode;
• a source line electrically connected to said source region;
• a planarizing layer insulating film provided on said transistor and having a flat surface;
• a common electrode provided on said planarizing layer insulating film;
• a dielectric film provided on said common electrode;
• and
• a pixel electrode provided on said dielectric film,
• wherein said common electrode is maintained at constant potential,
• wherein said common electrode, said dielectric film and said pixel electrode constitute a capacitor, and
• wherein said common electrode is formed between said source line and said pixel electrode and between said gate line and said pixel electrode.

An electro-optical device including a plurality of pixels, comprising:

• a plurality of gate lines over an insulating surface;
• a plurality of source lines over said insulating surface;
• a transistor formed at an intersection of each of said gate lines and each of said source lines, said transistor including source and drain regions, a channel region, a gate electrode adjacent to said channel region having a gate insulating film therebetween;
• a first insulating film over said transistor, each of said gate lines and each of said source lines;
• a common electrode comprising a transparent conductive film over said transistor having said first insulating film therebetween;
• a second insulating film over said common electrode;
• and
• a pixel electrode over said second insulating film,
• wherein said common electrode is formed between each of said gate lines and said pixel electrode and between each of said source lines and said pixel electrode, and
• wherein said common electrode in each of said pixels covers substantially an entire area of each of said pixels.

An electro-optical device comprising:

• a first gate line being formed over an insulating surface;
• a first source line being formed over said insulating surface;
• a second source line being formed over said insulating surface;
• a first transistor being formed at a first intersection of said first gate line and said first source line;
• a second transistor being formed at a second intersection of said first gate line and said second source line;
• a first insulating film being formed over said first gate line, said first source line, said second source line, said first transistor and said second transistor;
• a common electrode being formed on said first insulating film;
• a second insulating film being formed on said common electrode;
• a first pixel electrode being electrically connected to said first transistor;
• and
• a second pixel electrode being electrically connected to said second transistor,
• wherein said common electrode overlaps with said first source line, said second source line, said first pixel electrode and said pixel electrode.

An electro-optical device comprising:

• a first gate line being formed over an insulating surface;
• a second gate line being formed over said insulating surface;
• a first source line being formed over said insulating surface;
• a first transistor being formed at a first intersection of said first gate line and said first source line;
• a second transistor being formed at a second intersection of said second gate line and said first source line;
• a first insulating film being formed over said first gate line, said second gate line, said first source line, said first transistor and said second transistor;
• a common electrode being formed on said first insulating film;
• a second insulating film being formed on said common electrode;
• a first pixel electrode being electrically connected to said first transistor;
• and
• a second pixel electrode being electrically connected to said second transistor,
• wherein said common electrode overlaps with said first gate line, said second gate line, said first pixel electrode and said second pixel electrode.

A semiconductor device comprising:

• a transistor formed over an insulating surface, said transistor including source and drain regions, a channel forming region between said source and drain regions, and a gate electrode adjacent to said channel forming region having a gate insulating film therebetween;
• an inorganic film formed over said transistor;
• a first organic resin film formed on said inorganic film;
• a common electrode formed on said first organic resin film;
• a second organic resin film formed on said common electrode;
• a pixel electrode formed on said second organic resin film.