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US 5,981,454 AGranted
Post clean treatment composition comprising an organic acid and hydroxylamine
AssigneeEKC Technology, Inc.
InventorRobert J. Small
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AssigneeEKC Technology, Inc.
InventorRobert J. Small
Estimating the term…
A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofuctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper surface comprises applying the above composition to the copper surface, and polishing the surface in the presence of the composition.
A composition for removal of chemical residues from metal or dielectric surfaces, the chemical residues having been applied in a previous process step, and for stopping further chemical effects from the chemical residues, which comprises an aqueous solution with a pH between about 4 and about 6 and containing:
Dependencies are inferred from the claim text.