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US 5,980,978 AGranted
Formation of a metalorganic compound for growing epitaxial semiconductor layers
AssigneeThe Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland of Defence Evaluation and Research Agency
InventorsAnthony Copeland Jones, Simon Andrew Rushworth, Trevor Martin, Timothy John Whittaker, Richard William Freer
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Abstract
Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR.sub.3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with a metal halide in an amine solvent.
Claims24
A method of growing a semiconductor layer on a substrate comprising the steps of:
- delivering to the substrate, a metalorganic compound of the formula MR.sub.3, M being a metal and R being an alkyl group, prepared by reacting a Grignard reagent with a metal halide, and
- causing deposition on the substrate of the metal from the metalorganic compound, wherein reaction of the Grignard reagent with the metal halide is carried out in an amine solvent.
Dependencies are inferred from the claim text.