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US 5,977,693 AGranted
Micro-vacuum device
AssigneeKabushiki Kaisha Toshiba
InventorsMasayuki Nakamoto, Hiromichi Ohashi
Life of this patent
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Abstract
A micro-vacuum device comprises a substrates an emitter having a sharp end formed above the substrate, a gate electrode provided above the emitter, and an anode having cooling means provided oppositely to the substrate above the gate electrode.
Claims28
A micro-vacuum power switching device comprising:
- a vacuum defined by a top seal, a bottom seal and an insulating enclosure which is provided between the seals;
- a substrate provided on said bottom seal;
- an emitter formed on said substrate and having a sharp tip;
- a gate electrode formed in a region except for a tip region of said emitter, which is located above said substrate;
- and
- an anode provided on said top seal,
- wherein regions between said gate electrode and said anode are in a vacuum atmosphere state, and switching is operated by controlling a voltage applied to said gate electrode and anode.
4 more elements
A micro-vacuum power switching device comprising:
- a vacuum space defined by a top seal, a bottom seal and an insulating enclosure made of ceramic and provided between the seals;
- a substrate provided on said bottom seal;
- an emitter formed on said substrate and having a sharp tip;
- a gate electrode formed in a region except for a tip region of said emitter, which is located above said substrate;
- an anode provided on said top seal;
- wherein regions between said gate electrode and said anode are in a vacuum atmosphere state, and switching is operated by controlling a voltage applied to said gate electrode and anode.
3 more elements
A micro-vacuum power switching device comprising:
- a vacuum space defined by a top seal, a bottom seal and an insulating enclosure which is provided between the seals;
- a substrate provided on said bottom seal;
- an emitter formed on said substrate and having a sharp tip;
- a gate electrode formed in a region except for a tip region of said emitter, which is located above said substrate;
- an anode provided on said top seal;
- wherein regions between said gate electrodes and said anode are kept in a vacuum atmosphere, said emitter discharge a current density of 100 A/cm.sup.2 or higher, and switching is operated by controlling a voltage applied to said gate electrode and anode.
3 more elements
Dependencies are inferred from the claim text.